IRFS610BFP001

Fairchild Semiconductor IRFS610BFP001

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  • IRFS610BFP001
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, N
  • Transistors - FETs, MOSFETs - Single
  • IRFS610BFP001 Hoja de datos
  • TO-220-3 Full Pack
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 11911
  • Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
  • Garantía de calidad de 1 año 》
  • Haga clic para obtener tarifas
Part Number
IRFS610BFP001
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, N
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
22W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Tj)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack

IRFS610BFP001 Garantías

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Fairchild Semiconductor
Fairchild Semiconductor
Fairchild is now part of ON Semiconductor Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products ...
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