IXTP1R6N100D2

IXYS IXTP1R6N100D2

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  • IXTP1R6N100D2
  • IXYS
  • MOSFET N-CH 1000V 1.6A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • IXTP1R6N100D2 Hoja de datos
  • TO-220-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1352
  • Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
  • Garantía de calidad de 1 año 》
  • Haga clic para obtener tarifas
Part Number
IXTP1R6N100D2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 1.6A TO220AB
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
645 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

IXTP1R6N100D2 Garantías

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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IXYS
IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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