IXTU1R4N60P

IXYS IXTU1R4N60P

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  • IXTU1R4N60P
  • IXYS
  • MOSFET N-CH 600V 1.4A TO251
  • Transistors - FETs, MOSFETs - Single
  • IXTU1R4N60P Hoja de datos
  • TO-251-3 Short Leads, IPak, TO-251AA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2185
  • Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
  • Garantía de calidad de 1 año 》
  • Haga clic para obtener tarifas
Part Number
IXTU1R4N60P
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 600V 1.4A TO251
Package
Tube
Series
PolarHV™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Rds On (Max) @ Id, Vgs
9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-251-3 Short Leads, IPak, TO-251AA

IXTU1R4N60P Garantías

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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IXYS
IXYS
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