Vishay Siliconix SI2367DS-T1-GE3
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- SI2367DS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 20V 3.8A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2367DS-T1-GE3 Hoja de datos
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1793
- Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
- Garantía de calidad de 1 año 》
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| Part Number SI2367DS-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 20V 3.8A SOT23-3 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 (TO-236) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs 66mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 23 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds 561 pF @ 10 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
SI2367DS-T1-GE3 Garantías
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( Correo electrónico primero )
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Vishay Siliconix
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