SISS42LDN-T1-GE3

Vishay Siliconix SISS42LDN-T1-GE3

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  • SISS42LDN-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 100V 11.3A/39A PPAK
  • Transistors - FETs, MOSFETs - Single
  • SISS42LDN-T1-GE3 Hoja de datos
  • PowerPAK® 1212-8S
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 29221
  • Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
  • Garantía de calidad de 1 año 》
  • Haga clic para obtener tarifas
Part Number
SISS42LDN-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 100V 11.3A/39A PPAK
Package
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8S
Supplier Device Package
PowerPAK® 1212-8S
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs
14.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2058 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
PowerPAK® 1212-8S

SISS42LDN-T1-GE3 Garantías

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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