STMicroelectronics STGW50H65DFB2-4
- STGW50H65DFB2-4
- STMicroelectronics
- TRENCH GATE FIELD-STOP, 650 V, 5
- Transistors - IGBTs - Single
- STGW50H65DFB2-4 Hoja de datos
- TO-247-4
- Bulk
- Lead free / RoHS Compliant
- 13598
- Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
- Garantía de calidad de 1 año 》
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Part Number STGW50H65DFB2-4 |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description TRENCH GATE FIELD-STOP, 650 V, 5 |
Package Bulk |
Series HB2 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-4 |
Supplier Device Package TO-247-4 |
Power - Max 272 W |
Input Type Standard |
Reverse Recovery Time (trr) 92 ns |
Current - Collector (Ic) (Max) 86 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A |
Gate Charge 151 nC |
Td (on/off) @ 25°C 18ns/128ns |
Test Condition 400V, 50A, 12Ohm, 15V |
Current - Collector Pulsed (Icm) 150 A |
Switching Energy 629µJ (on), 478µJ (off) |
Package_case TO-247-4 |
STGW50H65DFB2-4 Garantías
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STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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