TK14N65W,S1F

Toshiba Semiconductor and Storage TK14N65W,S1F

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  • TK14N65W,S1F
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 650V 13.7A TO247
  • Transistors - FETs, MOSFETs - Single
  • TK14N65W,S1F Hoja de datos
  • TO-247-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2014
  • Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
  • Garantía de calidad de 1 año 》
  • Haga clic para obtener tarifas
Part Number
TK14N65W,S1F
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 650V 13.7A TO247
Package
Cut Tape (CT)
Series
DTMOSIV
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
130W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13.7A (Ta)
Rds On (Max) @ Id, Vgs
250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 300 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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