Toshiba Semiconductor and Storage TK4R4P06PL,RQ
- TK4R4P06PL,RQ
- Toshiba Semiconductor and Storage
- MOSFET N-CHANNEL 60V 58A DPAK
- Transistors - FETs, MOSFETs - Single
- TK4R4P06PL,RQ Hoja de datos
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 2297
- Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
- Garantía de calidad de 1 año 》
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Part Number TK4R4P06PL,RQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CHANNEL 60V 58A DPAK |
Package Cut Tape (CT) |
Series U-MOSIX-H |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 87W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 58A (Tc) |
Rds On (Max) @ Id, Vgs 4.4mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs 48.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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