Taiwan Semiconductor Corporation TSM250NB06DCR RLG
- TSM250NB06DCR RLG
- Taiwan Semiconductor Corporation
- DUAL N-CHANNEL POWER MOSFET 60V,
- Transistors - FETs, MOSFETs - Arrays
- TSM250NB06DCR RLG Hoja de datos
- 8-PowerTDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1752
- Inventario al contado / distribuidor autorizado / inventario restante de la fábrica
- Garantía de calidad de 1 año 》
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Part Number TSM250NB06DCR RLG |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Taiwan Semiconductor Corporation |
Description DUAL N-CHANNEL POWER MOSFET 60V, |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package 8-PDFN (5x6) |
Power - Max 2W (Ta), 48W (Tc) |
FET Type 2 N-Channel (Dual) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 30A (Tc) |
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1461pF @ 30V |
Package_case 8-PowerTDFN |
TSM250NB06DCR RLG Garantías
• Responda con prontitud
• Calidad garantizada
• Acceso global
• Precio de mercado competitivo
• Servicios todo en uno de la cadena de suministro
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( Correo electrónico primero )
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